PROCESS FOR INCREASING ADHESION Russian patent published in 2023 - IPC H01L21/02 

FIELD: semiconductors.

SUBSTANCE: invention can be used in the manufacture of semiconductor devices. The process for increasing the adhesion of a semiconductor structure includes forming areas of silicon dioxide and a barrier layer of molybdenum on a silicon wafer. The barrier molybdenum layer with a thickness of 100 nm is applied using a magnetron source. Then the barrier layer is treated with phosphorus ions at a dose of 6.10¹⁵-7.10¹⁶ cm^-2, with an energy of 250 keV at an ion beam current of 3.0 mcA/cm² and a temperature of 25°C followed by annealing in a hydrogen atmosphere.

EFFECT: invention improves the quality of semiconductor structures.

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