SENSOR OF CHEMICAL COMPOSITION Russian patent published in 2021 - IPC G01J3/00 H01L31/02 

Abstract RU 2753854 C1

FIELD: photonics.

SUBSTANCE: invention relates to photonics, in particular to methods and devices for analyzing the chemical composition of matter (air, liquids and solids). The sensor of chemical composition of a substance contains at least one first semiconductor structure (1) with a p-n junction (2) and at least one second semiconductor structure (3) with a p-sn junction (4), optically coupled and spaced apart on a transparent in the operating wavelength range of the substrate (5), the sensitive area (6) for placing the test substance located on the back side of the substrate (5), and electrical contacts (8), (9) and (10) formed respectively on the p-layer and on the n-layer, respectively, of the first (1) and second (3) semiconductor structure. The first semiconductor structure (1) is made in the form of an optical radiation source, and the second semiconductor structure (3) is made in the form of a photodetector. Semiconductor structures (1), (3) are fixed on the substrate (5) with adhesive (15), transparent in the operating wavelength range.

EFFECT: chemical composition sensor works in a wide range of lengths, which provides a wide range of applications.

4 cl, 7 dwg

Similar patents RU2753854C1

Title Year Author Number
MONOLITHIC SENSOR OF CHEMICAL COMPOSITION OF SUBSTANCE 2020
  • Matveev Boris Anatolievich
RU2727560C1
SUBSTANCE CHEMICAL COMPOSITION SENSOR 2020
  • Matveev Boris Anatolievich
RU2761501C1
SUBSTANCE CHEMICAL COMPOSITION SENSOR 2022
  • Matveev Boris Anatol'Evich
RU2788588C1
MULTI-CHANNEL INFRARED PHOTORECEIVING MODULE 2014
  • Matveev Boris Anatolevich
  • Remennyj Maksim Anatolevich
RU2647977C2
METHOD OF PRODUCING DIODES OF MEDIUM-WAVE INFRARED SPECTRUM 2016
  • Il'Inskaya Natal'Ya Dmitrievna
  • Matveev Boris Anatolievich
  • Remennyy Maksim Anatolievich
  • Usikova Anna Aleksandrovna
RU2647979C1
SEMICONDUCTOR DIODE FOR IR SPECTRAL RANGE 2002
  • Matveev Boris Anatol'Evich
RU2286618C2
METHOD OF PRODUCING DIODES OF MEDIUM-WAVE INFRARED SPECTRUM 2012
  • Il`Inskaya Natal`Ya Dmitrievna
  • Matveev Boris Anatolievich
  • Remennyy Maksim Anatolievich
  • Usikova Anna Aleksandrovna
RU2599905C2
METHOD FOR MAKING DIODES FOR MIDDLE-WAVE IR RANGE OF SPECTRUM 2015
  • Il'Inskaya Natal'Ya Dmitrievna
  • Ivanova Ol'Ga Veniaminovna
  • Matveev Boris Anatolievich
  • Remennyy Maksim Anatolievich
  • Usikova Anna Aleksandrovna
RU2647978C2
MEDIUM-WAVE INFRARED SEMICONDUCTOR DIODE 2011
  • Il'Inskaja Natal'Ja Dmitrievna
  • Matveev Boris Anatol'Evich
  • Remennyj Maksim Anatol'Evich
RU2570603C2
METHOD FOR MANUFACTURING PHOTODIODES OF THE MEDIUM-WAVE IR SPECTRAL RANGE 2019
  • Matveev Boris Anatolievich
  • Remennyi Maksim Anatolievich
RU2726903C1

RU 2 753 854 C1

Authors

Karandashev Sergey Arkadievich

Matveev Boris Anatolievich

Remennyi Maksim Anatolievich

Mohamed Ben Chouikha

Dates

2021-08-24Published

2020-12-11Filed