FIELD: chemistry.
SUBSTANCE: invention relates to the field of microwave plasma activated chemical vapor deposition. The device comprises a reactor chamber adapted to provide a plasma zone inside the reactor chamber by means of electromagnetic energy at a first frequency, and a composite right/left directed CRLH waveguide section adapted to operate at an infinite wavelength at a first frequency and having a transmission means in the wall designed to transfer electromagnetic energy from the interior of the CRLH-waveguide section to the interior of the reactor chamber.
EFFECT: increased area of chemical vapor deposition.
17 cl, 15 dwg
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