METHOD FOR MANUFACTURING THIN FILM TRANSISTOR Russian patent published in 2023 - IPC H01L21/265 H01L21/335 

FIELD: semiconductor devices.

SUBSTANCE: invention is related in particular to technology of manufacturing a thin-film transistor with a reduced defectiveness value. The method for manufacturing thin-film transistors according to the invention includes pre-treatment of Si substrates with a beam of neutralized Ar ions in ultrahigh vacuum, followed by annealing at a temperature of 600°C for 60 min in the chamber and formation of an amorphous silicon layer by the electron beam method at a rate of 0.5 nm/s on Si substrates heated to 100°C at pressure 2⋅10^-7 Pa, followed by densification of a layer of amorphous silicon at a temperature of 450°C.

EFFECT: invention provides a reduction in defectiveness, an increase in manufacturability, an improvement in parameters of devices, an increase in quality and an increase in the percentage of yield.

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