HIGH-VOLTAGE FIELD-EFFECT TRANSISTOR WITH STATIC INDUCTION AND SOURCE FROM HETEROJUNCTION Russian patent published in 2024 - IPC H01L29/772 

FIELD: physics.

SUBSTANCE: proposed invention relates to semiconductor equipment and can be used in power electronics devices for conversion of electric energy parameters in transport, robotics, radio engineering devices and secondary power supply sources. Essence of the disclosed high-voltage switching semiconductor transistor with a source from a heterojunction is that the existing structure of a transistor with static induction and a vertical channel KP926 is taken as a basis, where above the low-resistance region of the first type of conductivity of silicon, which is a drain, a high-resistance region of the same type of conductivity is formed, in which a gate region of the second type of conductivity is formed, inside which low-resistance regions of sources of the first conductivity type are formed. Distinctive feature of the transistor with the proposed structure is the movement of the main carriers - electrons, due to the potential well, from aluminium to gallium arsenide and then, under the effect of the drain field, they are transformed into silicon. Their concentration will correspond to 10²²⋅cm^-3. With such concentration of the main carriers, the channel resistance will decrease by more than two orders in the field mode of operation of the transistor, therefore, to obtain resistance of channel 2, …, 3 mOhm, the active area of the crystal can also be reduced by two orders, which means that the control power will also be reduced by two orders. Gate capacity will decrease by two orders and, accordingly, the switching time will decrease. Since only electrons with higher mobility will participate in the transfer current, the speed of operation will also increase.

EFFECT: creation of high-voltage power transistor structure, made on one chip in order to reduce channel resistance in open state, reduction of static power losses, increase of current transfer coefficient, as well as improvement of weight and dimensions and increase of speed of operation.

1 cl, 2 dwg