FIELD: Al-Si alloys.
SUBSTANCE: invention relates to a method for treating the surface of hypoeutectic silumin. A titanium film is applied to its surface using the vacuum-arc deposition method at an arc evaporator discharge current of 120 A, with a film deposition rate of 2.4 mcm/h for 25-125 minutes.
EFFECT: performance characteristics of hypoeutectic silumins are improved by changing the structural-phase composition of hypoeutectic Al-Si alloys.
1 cl, 5 dwg, 2 ex
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