THERMOELECTRIC LIGHT-EMITTING DIODE Russian patent published in 2025 - IPC H10H20/81 H10H20/858 

FIELD: electricity.

SUBSTANCE: invention relates to a thermoelectric light-emitting diode using graded-gap structures, which removes the released heat. Thermoelectric light-emitting diode contains a graded-gap semiconductor grown on the base with a decreasing work function in the direction of growth of the epitaxial structure in the whole range of compositions and an epitaxial layer of the direct-gap semiconductor grown on the graded-gap semiconductor. In the first version, the base comprises semiconductor material with n-type conductivity with work function equal to or close to that of the adjacent semiconductor material layer of the graded-gap semiconductor, the graded-gap semiconductor has n-type conductivity, and the direct-gap semiconductor layer has p-type conductivity and forms a p-n junction between the semiconductor layers. In the second version, the base contains semiconductor material with p-type conductivity with work function equal to or close to the work function of the adjacent semiconductor material layer of the graded-gap semiconductor, graded-gap semiconductor is a graded-gap p-n-structure with smooth doping from p-type to n-type, and the direct-gap semiconductor layer has p-type conductivity and forms a p-n junction between the semiconductor layers. On two opposite sides of the thermoelectric light-emitting diode there are contacts with the possibility of attaching connecting conductors to them. One of the contacts on the side of the direct-gap semiconductor layer is semitransparent.

EFFECT: reduced heat generation during operation of the light-emitting diode and, as a result, elimination of the possibility of the light-emitting diode overheating and its failure.

8 cl, 1 dwg