THERMOELECTRIC LIGHT-EMITTING DIODE Russian patent published in 2025 - IPC H10H20/81 H10H20/858 

FIELD: electricity.

SUBSTANCE: invention relates to a thermoelectric light-emitting diode using graded-gap structures, which removes the released heat. Thermoelectric light-emitting diode comprises a base on which a first graded-gap structure of direct-gap semiconductor materials is grown, with a decreasing work function in the direction of growth of the epitaxial structure in the entire range of compositions. On the first graded-gap structure, a second graded-gap structure is grown from direct-gap semiconductor materials, with a decreasing work function in the direction of growth of the epitaxial structure in the entire range of compositions. In the first version of LED manufacturing, the base contains semiconductor material with n-type conductivity, the first graded-gap structure has n-type conductivity, the second graded-gap structure has p-type conductivity. In the second version of LED manufacturing, the first and second graded-gap structures are graded-gap p-n-structures with smooth doping from p-type to n-type, and the base contains semiconductor material with p-type conductivity. Between first and second graded-gap structures in both versions p-n-junction is formed, and on two opposite sides of thermoelectric light-emitting diode contacts are made with possibility of attachment of connecting conductors to them for connection to electric circuit. One of the contacts, on the side of the direct-gap semiconductor layer, is semitransparent.

EFFECT: use of the invention makes it possible to reduce or eliminate heat generation during operation of the thermoelectric light-emitting diode and, as a result, eliminate the possibility of overheating of the light-emitting diode and its failure.

8 cl, 1 dwg