MULTICHANNEL MATRIX STABILITRON DIODE WITH LOW TEMPERATURE DRIFT Russian patent published in 2025 - IPC H10D89/00 H01L25/65 

FIELD: semiconductor electronics.

SUBSTANCE: multichannel matrix stabilitron with low temperature drift, containing common bus – ground, four input terminals, stabilitron and two pairs of integral diodes connected in series in one direction, connected by cathodes to power output, and the anodes are connected to the ground, the connection line of one pair of diodes is brought to two connected outputs, and the other pair – to the other outputs. At that, structure of matrix stabilitron is made in silicon substrate of n-type conductivity and consists of area of p-type conductivity, in which there is a region with high degree of doping of n-type conductivity, area with high degree of doping of p-type conductivity, contact area of p-type conductivity and contact area of n-type conductivity, also in the silicon substrate there are antiparasitic regions of n-type conductivity, in addition to the first structure of the stabilitron, at least one or more structures of stabilitrons are made, in series and/or in parallel in one silicon substrate of n-type conductivity with integral diodes, and on the surface of the silicon plate there is a dielectric layer with areas exposed for contacts, through which the contact areas with metal contacts are connected, which are connected to the switching system of connections of integral stabilitrons.

EFFECT: exclusion of growth of stabilization voltage at heating of a stabilitron during breakdown and expansion of its functional capabilities.

1 cl, 7 dwg