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SU

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1 671 071

(13)

A1

(51)

IPC

(21) (22)

Application

4759467/25, 1989-11-20

(22)

Actual filing date

1989-11-20

(45)

Published

1995-04-30

(72)

Inventor

Perinskij V.V.Kozejkin B.V.Shkol'Nikov L.Eh.

METALLIZATION FORMATION METHOD Russian patent published in 1995 - IPC

Abstract SU 1671071 A1

FIELD: microelectronics. SUBSTANCE: photoresist is applied on formed metallized interconnection, photoresistive mask, covering areas of contacts, is formed. Then, ion implantation of electric inactive addition of Ф ≥ 6,0·1014/cm-2 dose and E = 40 - 90 keV energy is exercised, mask is removed and using electroplating deposition metal is applied on non-implanted areas. Metal deposition is not applied on the rest part of interconnection. EFFECT: increased quality and number of useable metal contacts. 5 dwg

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SU 1 671 071 A1

Authors

Perinskij V.V.

Kozejkin B.V.

Shkol'Nikov L.Eh.

Dates

1995-04-30—Published

1989-11-20—Filed

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