ELECTROLYTE FOR ANODIC OXIDATION OF INDIUM ANTIMONIDE Russian patent published in 2006 - IPC H01L21/306 

Abstract SU 1840205 A1

FIELD: microelectronics.

SUBSTANCE: proposed electrolyte that can be widely used in manufacturing MIS devices has ammonium persulfate, glycerin, carbon tetrachloride, and dimethyl formamide; in addition, electrolyte incorporates water. Proportion of ingredients is as follows, mass percent: water, 0.1-1.0; ammonium persulfate, 0.3-3.0; carbon tetrachloride, 5.0-15.0; glycerin, 55.0-70.0; dimethyl formamide, the rest.

EFFECT: enhanced reproducibility of electrophysical parameters at indium antimonide-anodic oxide interface.

1 cl

Similar patents SU1840205A1

Title Year Author Number
METHOD FOR PRODUCING INSULATING FILMS FOR MIS STRUCTURES BUILT AROUND SEMICONDUCTOR JUNCTIONS AB 1978
  • Alekhin Anatolij Pavlovich
  • Emel'Janov Arkadij Vladimirovich
SU1840204A1
ELECTROLYTE FOR ANODIC OXIDATION OF TYPE АВ SEMICONDUCTORS 1977
  • Alekhin Anatolij Pavlovich
  • Emel'Janov Arkadij Vlidimirovich
  • Lavrishchev Vadim Petrovich
SU1840202A1
ELECTROLYTE FOR ANODIC OXIDIZING OF COMPLEX SEMICONDUCTOR COMPOUNDS AB 1976
  • Bakhtin Petr Aleksandrovich
  • Gontar' Viktor Mikhajlovich
  • Emel'Janov Arkadij Vladimirovich
  • Kandyba Petr Efimovich
SU1840187A1
SEMICONDUCTOR DEVICE 1980
  • Emel'Janov Arkadij Vladimirovicha
SU1840207A1
METHOD FOR ANODIC OXIDATION OF TYPE АВ SEMICONDUCTORS 1979
  • Alekhin Anatolij Pavlovich
  • Emel'Janov Arkadij Vladimirovich
SU1840206A1
ELECTROLYTE FOR ANODIC OXIDATION OF SEMICONDUCTOR COMPOUNDS BASED ON AB 2016
  • Grebenshikova Elena Aleksandrovna
  • Shutaev Vadim Arkadievich
  • Kapralov Aleksandr Anatol'Evich
RU2621879C1
METHOD FOR PRODUCING INSULATING FILMS FOR MIS STRUCTURES BASED ON INDIUM ARSENIDE AND ITS SOLID SOLUTIONS 1984
  • Emel'Janov Arkadij Vladimirovich
  • Alekhin Anatolij Pavlovich
  • Belotelov Sergej Vladimirovich
  • Soldak Tat'Jana Anatol'Evna
SU1840172A1
METHOD FOR FORMING A HYBRID DIELECTRIC COATING ON THE SURFACE OF INDIUM ANTIMONIDE ORIENTATION (100) 2022
  • Mirofyanchenko Andrej Evgenevich
  • Mirofyanchenko Ekaterina Vasilevna
RU2782989C1
METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE BASED ON AB COMPOUNDS AND ITS FORMATION METHOD 2010
  • Kesler Valerij Gennad'Evich
  • Kovchavtsev Anatolij Petrovich
  • Guzev Aleksandr Aleksandrovich
  • Panova Zoja Vasil'Evna
RU2420828C1
METHOD FOR ANODIC OXIDATION OF SEMICONDUCTORS IN HALOGEN-CONTAINING ELECTROLYTES 1977
  • Alekhin Anatolij Pavlovich
  • Emel'Janov Arkadij Vladimirovich
  • Lavrishchev Vadim Petrovich
SU1840203A1

SU 1 840 205 A1

Authors

Alekhin Anatolij Pavlovich

Emel'Janov Arkadij Vladimirovich

Lavrishchev Vadim Petrovich

Dates

2006-08-20Published

1979-03-13Filed