ELECTROLYTE FOR ANODIC OXIDIZING OF COMPLEX SEMICONDUCTOR COMPOUNDS AB Russian patent published in 2006 - IPC H01L21/00 

FIELD: technology for manufacturing semiconductor devices, possible use for manufacturing integration circuits on semiconductors A₃B₅.

SUBSTANCE: electrolyte contains dimethylformamide, ammonium persulphate and glycerin. Also, electrolyte additionally contains halogen-containing salt of ammonium, namely, fluorine ammonium or chlorine ammonium with following ratio of ingredients in percents of weight: dimethylformamide - 50-80, ammonium persulphate - 0,3-0,5, halogen-containing salt of ammonium - 0,0001-0,1, glycerin - the rest.

EFFECT: decreased density of surface state at boundary limit between semiconductor and anodic oxide.