FIELD: microelectronics; semiconductor device manufacture.
SUBSTANCE: proposed method that can be used, for instance, to build MIS devices around type A3B5 semiconductors involves electrochemical polishing of semiconductor wafers followed by their anodizing. Indium antimonide wafers are polished in 10N solution of KOH at current of 0.75 - 3.0 MA/cm2 for 10 - 30 minutes. Then solution is diluted with water to 0.1N concentration and wafers are anodized at same current. After that indium antimonide wafers are polished in 10N solution of KOH at current of 2 - 5 MA/cm2 for 5 - 10 minutes. Then solution is diluted with water to concentration of 0.1N and wafer is anodized at current of 1 - 3 MA/cm2 for 3 - 5 minutes.
EFFECT: improved electrophysical parameters of semiconductor-anodic-oxide interface.
3 cl
| Title | Year | Author | Number |
|---|---|---|---|
| ELECTROLYTE FOR ANODIC OXIDATION OF TYPE АВ SEMICONDUCTORS | 1977 |
|
SU1840202A1 |
| ELECTROLYTE FOR ANODIC OXIDATION OF INDIUM ANTIMONIDE | 1979 |
|
SU1840205A1 |
| METHOD FOR ANODIC OXIDATION OF SEMICONDUCTORS IN HALOGEN-CONTAINING ELECTROLYTES | 1977 |
|
SU1840203A1 |
| METHOD FOR PRODUCING INSULATING FILMS FOR MIS STRUCTURES BASED ON INDIUM ARSENIDE AND ITS SOLID SOLUTIONS | 1984 |
|
SU1840172A1 |
| METHOD FOR PRODUCING INSULATING FILMS FOR MIS STRUCTURES BUILT AROUND SEMICONDUCTOR JUNCTIONS AB | 1978 |
|
SU1840204A1 |
| SEMICONDUCTOR DEVICE | 1980 |
|
SU1840207A1 |
| ELECTROLYTE FOR ANODIC OXIDIZING OF COMPLEX SEMICONDUCTOR COMPOUNDS AB | 1976 |
|
SU1840187A1 |
| METAL-DIELECTRIC-SEMICONDUCTOR STRUCTURE BASED ON AB COMPOUNDS AND ITS FORMATION METHOD | 2010 |
|
RU2420828C1 |
| METHOD FOR FORMING A HYBRID DIELECTRIC COATING ON THE SURFACE OF INDIUM ANTIMONIDE ORIENTATION (100) | 2022 |
|
RU2782989C1 |
| MULTICOMPONENT CONDUCTOR-INSULATOR INTERLAYER-INSULATOR STRUCTURE | 1986 |
|
SU1840166A1 |
